IRF640NLPBF
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For Reference Only
| Part Number | IRF640NLPBF |
| LIXINC Part # | IRF640NLPBF |
| Manufacturer | Infineon Technologies |
| Category | |
| Description | MOSFET N-CH 200V 18A TO262 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IRF640NLPBF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Oct 23 - Oct 27 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
IRF640NLPBF Specifications
| Part Number: | IRF640NLPBF |
| Brand: | Texas Instruments |
| Current - Continuous Drain (Id) @ 25°C : | 18A (Tc) |
| Drain to Source Voltage (Vdss) : | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) : | 10V |
| FET Feature : | - |
| FET Type : | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs : | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds : | 1160 pF @ 25 V |
| Mounting Type : | Through Hole |
| Operating Temperature : | -55°C ~ 175°C (TJ) |
| Package / Case : | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Power Dissipation (Max) : | 150W (Tc) |
| Product Status : | Not For New Designs |
| Rds On (Max) @ Id, Vgs : | 150mOhm @ 11A, 10V |
| Supplier Device Package : | TO-262 |
| Technology : | MOSFET (Metal Oxide) |
| Vgs (Max) : | ±20V |
| Vgs(th) (Max) @ Id : | 4V @ 250µA |
IRF640NLPBF Documents
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Quick Inquiry
| In Stock | 4854 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $2.1100 | $2.1100 |
XingHuan will offer the most competitive prices for you, please refer to the quotations.
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